6 fo 1 egap 00.1.ver 0010je3000sd90r jul 14, 2010 preliminary da ta sheet NE202930 silicon npn epitaxial high frequency transistor fe at ur es ? h ig h trans iti on freq uen cy f t = 11 gh z typ. ? id eal for low no ise and low di stortio n amp lificati on ? su ita ble for eq uipmen ts of low co llect or vo lta ge (less th an 5 v) ? suit able for up to 1 ghz a ppli cations applications ? lna (l ow n oise a mplifier) or power splitter for digital-tv outline renesas package code: 30 (package name: 3-pin super minimold (30 pkg)) note: marking is "r7d" 1. emitter 2. base 3. collector ordering information part numb er order number pac kage marking supplying form ne20 29 30-t1 ne20 29 30-t1 -a 3-pin s uper minimold (30 pkg) (pb- free) r7d ? emboss ed tape 8 mm wi de ? pin 3 fa ce the perfor at ion si de of t he t ap e ? qty 3 kpcs/reel rem ark to order eval uation sa mp les, plea se contac t yo ur ne ar by sa les office. part numbe r for sample order: ne202 930-a absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo 9 v col lector to emitter voltage (b ase shor t) v ces 9 v col lector to emitter voltage (base open) v ceo 6 v emitter to base voltage v ebo 2 v coll ector curr ent i c 100 ma to tal power di ssipati on note p tot 150 mw junc tion te mperature t j 150 c storage te mperature t stg ? 65 to + 150 c no te: free air cau ti on observe precautions when handling because these devices are sensitive to electrostatic discharge. r09ds0003ej0100 rev.1.00 jul 14, 2010 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE202930 r09ds0003ej0100 rev.1.00 page 2 of 6 jul 14, 2010 electrical characteristics (t a = +25 c, unless otherwise specified) parameter symbol test conditi ons min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ? ? 100 na emitter cut-off current i ebo v eb = 1 v, i c = 0 ? ? 100 na dc current gain h fe note1 v ce = 5 v, i c = 5 ma 85 140 205 ? rf characteristics gain bandwidth product f t v ce = 5 v, i c = 30 ma, f = 1 ghz ? 11.0 ? ghz insertion power gain ? s 21e ? 2 v ce = 5 v, i c = 30 ma, f = 1 ghz 11.5 13.5 ? db noise figure (1) nf1 v ce = 5 v, i c = 5 ma, f = 1 ghz, z s = z sopt , z l = 50 ? 1.15 1.5 db noise figure (2) nf2 v ce = 5 v, i c = 30 ma, f = 1 ghz, z s = z sopt , z l = z lopt ? 1.5 ? db associated gain (1) g a 1 v ce = 5 v, i c = 5 ma, f = 1 ghz, z s = z sopt , z l = 50 10.0 12.0 ? db associated gain (2) g a 2 v ce = 5 v, i c = 30 ma, f = 1 ghz, z s = z sopt , z l = z lopt ? 13.5 ? db reverse transfer capacitance c re note 2 v cb = 5 v, i e = 0, f = 1 mhz ? 0.6 0.8 pf maximum stable power gain msg note 3 v ce = 5 v, i c = 30 ma, f = 1 ghz 13.5 15.5 ? db gain 1 db compression output power p o (1 db) v ce = 5 v, i c (set) = 30 ma, f = 1 ghz, z s = z sopt , z l = z lopt ? 19 ? dbm output 3rd order intercept point oip 3 v ce = 5 v, i c (set) = 30 ma, f = 1 ghz, f = 1 mhz, z s = z sopt , z l = z lopt ? 32 ? dbm notes: 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacitance when the emitter grounded. 3. msg = h fe classification rank yfb marking r7d h fe value 85 to 205 s 21 s 12 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE202930 r09ds0003ej0100 rev.1.00 page 3 of 6 jul 14, 2010 typical characteristics (t a = +25 c, unless otherwise specified) 0 25 50 75 100 125 150 150 100 50 200 free air total power dissipation vs. ambient temperature ambient temperature t a ( c) total power dissipation p tot (mw) collector to emitter voltage v ce (v) collector current i c (ma) collector current vs. collector to emitter voltage 0 0 5 10 20 12 3 45 100 a 15 i b = 10 a 20 a 30 a 40 a 50 a 60 a 70 a 80 a 90 a collector to base voltage v cb (v) reverse transfer capacitance c re (pf) reverse transfer capacitance vs. collector to base voltage 0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 12 3 4 9 56 7 8 base to emitter voltage v be (v) collector current i c (ma) collector current vs. base to emitter voltage 0 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 0.001 0.0001 v ce = 5 v collector current i c (ma) dc current gain h fe dc current gain vs. collector current v ce = 5 v 0.001 10 100 1 000 0.01 0.1 1 10 100 1 gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current v ce = 5 v, f = 1 ghz 14 12 10 8 6 4 2 0 10 1 100 remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE202930 r09ds0003ej0100 rev.1.00 page 4 of 6 jul 14, 2010 frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 11 0 25 20 15 10 5 0 mag msg |s 21e | 2 0.1 collector current i c (ma) v ce = 5 v, f = 1 ghz 18 16 14 12 10 8 6 4 2 0 10 1 100 msg |s 21e | 2 insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) mag each input power p in (each) (dbm) v ce = 5 v, i ce (set) = 30 ma, f = 1 ghz ?50 ?80 0 10 20 ?10 ?30 30 each output power p out (each) (dbm) 3rd order intermodulation distortion im 3 (db) each output power, im 3 vs. each input power p out im 3 ?70 ?60 ?20 ?40 ?30 ?10 20 0 10 40 30 ?20 input power p in (dbm) collector current vs. input power linear gain g l (db) output power p out (dbm) collector current i c (ma) 30 20 10 0 ?10 200 150 100 50 0 ?20 ?10 0 10 v ce = 5 v, i ce (set) = 30 ma, f = 1 ghz g l p out i c output power, linear gain, 20 collector current i c (ma) noise figure nf (db) noise figure, associated gain vs. collector current v ce = 5 v, f = 1 ghz, z s = z opt , z l = 50 1 5 4 3 2 1 0 10 100 associated gain g a (db) 15 13 11 9 7 5 collector current i c (ma) noise figure nf (db) noise figure, associated gain vs. collector current v ce = 5 v, f = 1 ghz, z s = z l = z opt 1 5 4 3 2 1 0 10 100 associated gain g a (db) 15 13 11 9 7 5 v ce = 5 v, i ce = 5 ma remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE202930 r09ds0003ej0100 rev.1.00 page 5 of 6 jul 14, 2010 s-parameters s-parameters and noise parameters are provided on our web s ite in a format (s2p) that en ables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [rf and microwave] [device parameters] url http://www2.renesas.com/microwave/en/download.html a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE202930 r09ds0003ej0100 rev.1.00 page 6 of 6 jul 14, 2010 package dimensions 3-pin super minimold (30 pkg) (unit: mm) 0.90.1 0.3 0.15 +0.1 ?0.05 0 to 0.1 marking 2.00.2 0.65 0.65 0.3 +0.1 ?0 0.3 +0.1 ?0 1 2 3 2.10.1 1.250.1 pin connections 1. emitter 2. base 3. collector a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ne 202930 data sheet description rev. date page summary 1.00 jul 14, 2010 ? first edition issued
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